Growth of Zn1−xMnxTe films on GaAs(1 0 0) by hot-wall epitaxy

We have studied the growth of the Zn1−xMnxTe film on the GaAs(1 0 0) substrate by use of hot-wall epitaxy (HWE) system. The growth rate is rather slow and the epitaxial Zn1−xMnxTe films with thickness of about 230 nm are obtained after 6 h deposition. Mn composition can be easily controlled in the range of x=0–0.33 by changing the Mn source temperature (650–680 °C). It, however, is found that the structural quality of the films degrades with increasing Mn composition. Obtained Zn1−xMnxTe films showed photoluminescence originating in Mn2+ ions.