Modification of Sb/Si(0 0 1) interface by incorporation of In(4 3) surface reconstruction

The formation of a Sb/Si(0 0 1) interface with artificial surface structure is achieved by Sb adsorption onto the In(4 3) surface phase at RT followed by annealing between 230 and 280 8C. RHEED and STM studies of the evolution of the surface morphology during annealing revealed that the new Sb-induced surface includes the reconstructed Si layer with fractional density of topmost Si atoms left after the initial In(4 3) surface is destroyed by Sb atoms. Upon annealing above 350 8C this structure changes into the conventional Sb(2 1) reconstruction accompanied by an increase in surface roughness