Title of article
Formation of pores in Ge single crystal by laser radiation
Author/Authors
A. Medvid’ *، نويسنده , , A. Mychko، نويسنده , , A. Krivich، نويسنده , , P. Onufrijevs، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
203
To page
208
Abstract
Formation of a porous structure on the surface of Ge single crystals by pulsed YAG:Nd laser irradiation at the intensity of
25 MW/cm2 is reported. An increase of surface recombination velocity on the irradiated surface by a factor of 100 is observed
and explained by increase of the geometric area of the surface due to formation of pores. The latter is attributed to
inhomogeneous pressure of a pulsed laser beam on the melting irradiated surface of the crystal.
Keywords
Ge single crystal , Pores , Laser Radiation , Magnetoconcentration effect , AFM
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1000850
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