Title of article
Growth and characterization of Zn1 xCdxO films using remote plasma MOCVD
Author/Authors
Junji Ishihara، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
381
To page
384
Abstract
Zn1 xCdxO films were successfully grown by remote plasma enhanced metalorganic chemical vapor deposition (RPEMOCVD)
with diethyl zinc, dimethyl cadmium, and oxygen plasma. The Cd composition x in the Zn1 xCdxO films was tuned by
changing a flow rate of group-II sources. With increasing the Cd composition x, the crystal structure was changed from wurzite
(WZ) to rock-salt (RS). The optical band-gap of the Zn1 xCdxO films with the wurzite structure up to x 0.7 varied from 3.3 eV
down to 1.9 eV.
Keywords
Remote plasma enhanced metalorganic chemical vapor deposition , Zn1 xCdxO , Dimethyl cadmium , Diethyl zinc
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1000891
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