Title of article
Influence of ambient medium on femtosecond laser processing of silicon
Author/Authors
S. Besner، نويسنده , , Jean-Yves Degorce، نويسنده , , A.V. Kabashin، نويسنده , , M. Meunier *، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
163
To page
168
Abstract
Femtosecond laser radiation (800 nm, 250 fs, 1 mJ/pulse) has been used to treat a Si surface in different ambient
environments, namely vacuum, air and water. We show that ablation threshold and crater characteristics (diameter ‘‘D’’
and shape of craters) are similar for the three media at low laser fluences, suggesting an identical radiation-related mechanism of
material removal. In contrast, at high fluences the characteristic dependence of the crater size D2( F) in the semi-logarithmic
scale becomes non-linear, starting from F = 10, 4 and 2 J/cm2 for vacuum, air and water, respectively, while the shape of craters
becomes different for these media. The non-linear phenomena are ascribed to plasma-related ablation effects. Possible
mechanisms of material removal are discussed.
Keywords
Femtosecond laser ablation in liquid , Crater characteristics , Silicon
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1001095
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