Title of article
Growth of SrTiO3 films on Si(0 0 1)–Sr(2 1) surfaces
Author/Authors
Md. Nurul Kabir Bhuiyan*، نويسنده , , Hiroaki Kimura، نويسنده , , Toyokazu Tambo، نويسنده , , Chiei Tatsuyama، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
419
To page
424
Abstract
The growth and characterization of a SrTiO3 film by molecular beam deposition process have been studied. After Sr
deposition on the chemically formed SiO2/Si surface, a stable and well-ordered Si(0 0 1)–Sr(2 1) surface was formed. The
SrTiO3 films were grown on the Si(0 0 1)–Sr(2 1) surface at 80 8C in a molecular oxygen partial pressure of approximately
3 10 7 Torr and subsequently in situ post-annealed at various high temperatures without oxygen supply in ultra-high vacuum
(<2.5 10 9 Torr). The combined reflection high-energy electron diffraction, X-ray diffraction and atomic force microscopy
analyses suggest that the SrTiO3 film grown at 80 8C is amorphous nature. The lowest post-annealing temperature from
amorphous-to-crystal transformation of the SrTiO3 film is approximately 485 8C. The quality of the crystalline SrTiO3 films is
further improved by post-annealing at temperatures between 600 and 700 8C.
Keywords
SrTiO3 films , Si(0 0 1) substrates , MBD , AFM , XRD , RHEED
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1001318
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