Title of article
Well-aligned ZnO nanowires grown on Si substrate via metal–organic chemical vapor deposition
Author/Authors
Yu-Jia Zeng، نويسنده , , Zhizhen Ye، نويسنده , , Wei-Zhong Xu، نويسنده , , Liping Zhu، نويسنده , , Binghui Zhao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
280
To page
283
Abstract
ZnO nanowires were grown on silicon substrate by metal–organic chemical vapor deposition (MOCVD) without catalysts.
The scanning electron microscopy (SEM) observations along with X-ray diffraction (XRD) results suggest that the ZnO
nanowires are single crystals vertically well-aligned to silicon substrate. Room-temperature photoluminescence (PL) measurement
reveals strong UV emission and weak green emission, which demonstrates that the nanowires are of good optical
properties. The mechanism of the catalyst-free growth of ZnO nanowires on silicon substrate is proposed.
Keywords
SCANNING ELECTRON MICROSCOPY , nanowires , Metal–organic chemical vapor deposition , Zinc compounds
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1001356
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