Title of article
GaAs nanocrystals: Structure and vibrational properties
Author/Authors
J. Nayak، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
8
From page
2867
To page
2874
Abstract
GaAs nanocrystals were grown on indium tin oxide substrate by an electrodeposition technique. Atomic force microscopic
measurement indicates an increase in the size of the nanocrystal with decrease in the electrolysis current density accompanied by
the change in the shape of the crystallite. Transmission electron microscopic measurements identify the crystallite sizes to be in
the range of 10–15 nm and the crystal structure to be orthorhombic. On account of the quantum size effect, the first optical
transition was blue shifted with respect to the band gap of the bulk GaAs and the excitonic peak appeared prominent. A localized
phonon mode ascribed to certain point defect occurred in the room temperature micro-Raman spectrum.
Keywords
Quantum size effect , point defect , Orthorhombic phase , Micro-Raman spectroscopy
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1001784
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