Self-implantation of Cz-Si: Clustering and annealing of defects

Observations of vacancy clusters formed in Czochralski (Cz) Si after high energy ion implantation are reported. Vacancy clusters were created by 2 MeV Si ion implantation of 1 1015 ions/cm2 and after annealing between 600 and 650 8C. Doppler broadening measurements using a slow positron beam have been performed on the self-implanted Si samples, both as-implanted and after annealing between 200 and 700 8C for time intervals ranging from 15 to 120 min. No change in the S parameter was noted after the thermal treatment up to 500 8C. However, the divacancies (V2) created as a consequence of the implantation were found to start agglomerating at 600 8C, forming vacancy clusters in two distinct layers below the surface; the first layer is up to 0.5 mmand the second layer is up to 2 mm. The S–Wplots of the data suggest that clusters of the size of hexavacancies (V6) could be formed in both layers after annealing for up to an hour at 600 8C or half an hour at 650 8C. After annealing for longer times, it is expected that vacancies are a mixture of V6 and V2, with V6 most probably dominating in the first layer. Further annealing for longer times or higher temperatures breaks up the vacancy clusters or anneals them away.