Cathodoluminescence and epitaxy after laser annealing of Cs+-irradiated a-quartz

In the course of a systematic investigation of dynamic, chemical, and laser-induced solid phase epitaxy of a-quartz after ion implantation, we have studied epitaxy and cathodoluminescence emission after 250 keV Cs-ion implantation and subsequent pulsed excimer laser treatment in air. Rutherford backscattering channelling analysis showed partial epitaxy for all the laser-irradiated samples; however, no full epitaxy was achieved. The optical properties of these samples were analyzed using cathodoluminescence spectroscopy, giving evidence of five emission bands at 2.42, 2.79, 3.25, 3.65, and 4.30 eV photon energy. Their intensity relation to the laser power and retained Cs-ion fraction are discussed and the present results will be compared with those obtained after chemical and dynamic epitaxy of quartz after alkali-ion, Ge, and Ba implantation.