The p–n junction formation in Hg1 xCdxTe by laser annealing method

The formation of p–n junctions in Hg1 xCdxTe is still an open research task. In this paper, laser treatment of n-type Hg1 xCdxTe samples resulting in the formation of a p–n junction is studied. The YAG:Nd3+ laser with pulse duration of 250 ms or 40 ns was used. The energy density of laser beam was below the threshold of sample surface melting. The interpretation of the results is based on a model of defects formation related to interstitial mercury diffusion following laser irradiation. The Hall measurements clearly point out to a simple p–n junction. The resistance of samples shows the long time relaxation described by the 1/2 power law, which is attributable to the defect diffusion processes, but not to the changes in the electron–hole systems.