Title of article
Ab initio comparative study of C54 and C49 TiSi2 surfaces
Author/Authors
Tao Wang، نويسنده , , Soon-Young Oh، نويسنده , , Won Jae Lee، نويسنده , , Yong-Jin Kim، نويسنده , , Hi-Deok Lee، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
8
From page
4943
To page
4950
Abstract
A theoretical comparison of C54 and C49 TiSi2 surfaces is presented, using ab initio plane-wave ultrasoft pseudopotential
method based on generalized gradient approximation (GGA). The different surface energies of TiSi2 have not only been
calculated out, but the preferential formation of C49 phase in solid-state reaction could be explained by smaller surface energies
and Poisson’s ratio of C49 TiSi2 as well. As for polar C54 TiSi2(1 0 0) and C49 TiSi2(0 1 0) surfaces, the Si termination surfaces
are more stable
Keywords
Ab initio , silicide , TiSi2 , Surface energy
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002102
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