XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation

In this paper, nitridation process of GaAs (1 0 0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method I–Vand photoluminescence surface state spectroscopy (PLS3) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces. The elaborated structures were characterised by I–Vanalysis. The saturation current IS, the ideality factor n, the barrier height FBn and the serial resistance RS are determined. The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS3 technique), the value of the interface state density NSS(E) close to the mid-gap was estimated to be in the range of 2–4 1011 eV 1 cm 2, indicating a good electronic quality of the obtained interfaces. Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed