Title of article
Quantum states in fabricating poly-Si films
Author/Authors
Ruimin Jin *، نويسنده , , Jingxiao Lu b، نويسنده , , Yu Ja، نويسنده , , Shie Yang، نويسنده , , Liwei Zhang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
8258
To page
8260
Abstract
The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been
crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size
present quantum states with the increasing of the gas flow ratios of SiH4, H2 mixture, substrate temperatures, frequency power, annealing
temperature and time.
Keywords
grain size , Pulsed rapid thermal annealing , Quantum states , PECVD , Conventional furnace annealing
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002700
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