Effect of buffer layer on VOx film fabrication by reactive RF sputtering

Vanadium oxide VOx films were fabricated by RF magnetron sputtering on various metal buffer layers or silica glass substrates at a substrate temperature of 400 8C. V2O5 film was fabricated on a silica glass substrate, and VO2 films were fabricated on V,W, Fe, Ni, Ti, and Pt metal buffer layers. The transition temperature of the sample on the V buffer layer was 68 8C and that on theWbuffer layer was 53 8C. The VO2 film was also fabricated on the V buffer layer by non-reactive sputtering using a V2O5 target at a substrate temperature of 400 8C.