Fabrication of isotype (p-p) selenium–polyaniline heterojunction diode by electrochemical method

In the present work, for the first time, heterojunction has been fabricated using electrochemically deposited isotype p-selenium–p-polyaniline from a single solution bath. The structural characterization of selenium and polyaniline thin film was carried out using XRD technique. Polyaniline exhibited amorphous structure while selenium offered monoclinic (b) phase. The junction was formed by electrodepositing polyaniline over selenium film and heating at 423 K. The current density versus voltage (J–V) plot showed the formation of a junction with ideality factor of 1.16. From J–V characteristics at different temperatures, static resistance (Rs), dynamic resistance (Rd), and rectification ratio of diodes were determined. Heat treatment above 448 K caused junction breakdown