Title of article
Nanostructure characterization of high k materials by spectroscopic ellipsometry
Author/Authors
L. Pereira *، نويسنده , , H. A´ GUAS، نويسنده , , E. Fortunato، نويسنده , , R. Martins، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
339
To page
343
Abstract
In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic
ellipsometry, where a Tauc–Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The
samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 8C.
Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 8C does not change the amorphous nature of the films,
increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room
temperature. Data concerning the use of a four-layer model based on one and two Tauc–Lorentz dispersions is also discussed, emphasizing its use
for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering
Keywords
Tantalum oxide , Spectroscopic ellipsometry , Titanium oxide
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002849
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