• Title of article

    Nanostructure characterization of high k materials by spectroscopic ellipsometry

  • Author/Authors

    L. Pereira *، نويسنده , , H. A´ GUAS، نويسنده , , E. Fortunato، نويسنده , , R. Martins، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    5
  • From page
    339
  • To page
    343
  • Abstract
    In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc–Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 8C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 8C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc–Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering
  • Keywords
    Tantalum oxide , Spectroscopic ellipsometry , Titanium oxide
  • Journal title
    Applied Surface Science
  • Serial Year
    2006
  • Journal title
    Applied Surface Science
  • Record number

    1002849