Title of article
Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters
Author/Authors
P.B. Parchinskiy، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
515
To page
518
Abstract
Photoluminescence (PL) measurements of the GaMnAs layers embedded with MnAs clusters have been performed. It was shown that the
presence of MnAs clusters in the semiconducting matrix leads to appearance in the PL spectra a broad peak with local maximums at 1.36 and
1.33 eV, which are related with the defects generated in the phase separation process. The effect of the MnAs clusters on the temperature dependent
band gap of GaMnAs was also observed.
Keywords
MnAs cluster , Photoluminescence , GaMnAs
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1002883
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