Diffusion behaviour of Nb in yttria-stabilized zirconia single crystals: A SIMS, AFM and X-ray reflectometry investigations

Using secondary ion mass spectrometry (SIMS) we have investigated the concentration vs. depth profile of Nb, thermally diffused into (1 0 0)- oriented yttria-stabilized zirconia (YSZ) single crystal substrates. The surface morphology of Nb films and YSZ substrates was analyzed using atomic force microscopy (AFM). The structural disorder and the interface configuration of the samples were investigated by X-ray reflectometry (XRR). Two kinds of substrates were used: as-received (AR) and reduced (R) ones. The R-substrates were obtained by thermal annealing of ARsubstrates in air for 2 h at 1250 C. The bulk diffusion coefficients DT in the temperature range of 780–1000 C, activation energy Q, and the preexponential factor, D0, have been obtained for Nb in YSZ. For the AR single crystals, the results can be well represented by the expression: Dðcm2 s 1Þ ¼ 2:93 101 exp 3:91 ½eV kBT The diffusion behaviour of Nb in the R-substrates yields slightly different results. It is concluded that incorporation of Nb into YSZ lattice is governed by the vacancy mechanism