Title of article
The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface
Author/Authors
F.N. Dultsev *، نويسنده , , L.A. Nenasheva، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
1287
To page
1290
Abstract
The effect of hydrogen on the reactive ion etching (RIE) of GaAs in the CF2Cl2 plasma is discussed. The addition of hydrogen into the reaction
mixture improves the sharpness of etch borders; the etched surface is smooth for etching depth > 1 mm, etching rate is time-constant.
Keywords
Reactive Ion Etching , hydrogen , Gallium arsenide , surface roughness
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1003005
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