Title of article
Field emission from nonaligned SiC nanowires
Author/Authors
W.M. Zhou *، نويسنده , , Susan Y.J. Wu، نويسنده , , Eric Siu-Wai Kong، نويسنده , , F. Zhu، نويسنده , , Z.Y. Hou، نويسنده , , Y.F. Zhang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
2056
To page
2058
Abstract
b-SiC nanowires with an average diameter of 8–20 nm were synthesized using a simple thermal evaporation of SiO powders onto activated
carbon fibers. Field emission was investigated based on the SiC nanowires deposited on a platinum film. A low turn-on field of 3.1–3.5 V mm 1 was
measured at an anode-sample separation of 100–140 mm. This type of SiC nanowires can be applied as field emitters in displays as well as vacuum
electronic devices
Keywords
Nanowires , Field emission with low turn-on field , b-Silicon carbide nanowires , SiC
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1003131
Link To Document