Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

We report the fabrication of p-type Zn0.9Mg0.1O thin films codoped with Al and N via dc magnetron sputtering method. The XRD patterns show the as-grown films with a strict c-axis orientation. Hall effect measurement confirms the conversion of conduction type in a certain range of temperature. The obtained films with the best electrical properties show a hole concentration in the order of 1018 cm 3 and resistivity in the range of 20–30 V cm. The transmittance spectrum reveals a distinct blue shift between pure ZnO and Al–N codoped Zn0.9Mg0.1O films, which confirms the effective incorporation of Mg. The band gap of the alloy is controllable