Thermal oxidation temperature dependence of 4H-SiC MOS interface

The thermal oxidation temperature dependence of 4H-silicon carbide (SiC) is systematically investigated using X-ray photoelectron spectroscopy (XPS) and capacitance–voltage (C–V) measurements. When SiC is thermally oxidized, silicon oxycarbides (SiCxOy) are first grown and then silicon dioxide (SiO2) is grown. It is identified by XPS that the SiO2 films fall into two categories, called SiC-oxidized SiO2 and Sioxidized SiO2 in this paper. The products depend on thermal oxidation temperature. The critical temperature is between 1200 and 1300 8C. The interface trap density (Dit) of the sample possessing Si-oxidized SiO2, at thermal oxidation temperature of 1300 8C, is lower than SiC-oxidized SiO2 at and below 1200 8C, suggesting that a decrease of the C component in SiO2 film and SiO2/SiC interface by higher oxidation temperature improves the metal-oxide–semiconductor (MOS) characteristics