Title of article
Chemical characterization of gallium droplets grown by LP-MOCVD
Author/Authors
Marc L. Imhoff، نويسنده , , O. Heintz، نويسنده , , V. Gauthier، نويسنده , , C. Marco de Lucas، نويسنده , , S. Bourgeois، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
2820
To page
2824
Abstract
This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single
growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses
results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity
probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering
of the substrate by a thin gallium layer of gallium compounds is observed.
Keywords
MOCVD , SIMS , Gallium droplets , XPS , TEM
Journal title
Applied Surface Science
Serial Year
2006
Journal title
Applied Surface Science
Record number
1003255
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