Title of article
Characterization of In/Pd and Pd/In/Pd thin films by ellipsometric, XRD and AES methods
Author/Authors
A.A. Wronkowska، نويسنده , , A. Wronkowski، نويسنده , , A. Bukaluk، نويسنده , , M. Trzcin´ski، نويسنده , , K. Okulewicz، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
3367
To page
3371
Abstract
Abstract
In/Pd and Pd/In/Pd thin films were prepared by thermal evaporation on the SiO2 substrate in a vacuum. The structural and optical properties of
the films were investigated by means of X-ray diffractometry (XRD), Auger electron spectroscopy (AES) and spectroscopic ellipsometry (SE).
Auger depth profile studies were performed in order to determine the composition of elements in the Pd-In systems. Interdiffusion of metals was
detected at room temperature. Optical properties of Pd-In composite layers formed due to the interdiffusion were derived from ellipsometric
quantities C and D measured in the photon energy range 0.75–6.50 eV at different angles of incidence. The effective optical spectra show
absorption peaks dependent on the composition of nonuniform films. The XRD patterns indicated formation of Pd1 xInx intermetallic phases in the
samples.
Keywords
Auger electron spectroscopy , Interdiffusion , Spectroscopic ellipsometry , X-ray diffractometry , Dielectric function , PdIn compounds
Journal title
Applied Surface Science
Serial Year
2007
Journal title
Applied Surface Science
Record number
1003336
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