The conductance and capacitance–frequency characteristics of Au/pyronine-B/p-type Si/Al contacts

The rectifying junction characteristics of the organic compound pyronine-B (PYR-B) film on a p-type Si substrate have been studied. The PYRB has been evaporated onto the top of p-Si surface. The barrier height and ideality factor values of 0.67 0.02 eVand 2.02 0.03 for this structure have been obtained from the forward bias current–voltage (I–V) characteristics. The energy distribution of the interface states and their relaxation time have been determined from the forward bias capacitance–frequency and conductance–frequency characteristics in the energy range of ((0.42 0.02) Ev)–((0.66 0.02) Ev) eV. The interface state density values ranges from (4.21 0.14) 1013 to (3.82 0.24) 1013 cm 2 eV 1. Furthermore, the relaxation time ranges from (1.65 0.23) 10 5 to (8.12 0.21) 10 4 s and shows an exponential rise with bias from the top of the valance band towards the midgap.