Field-effect transistor based on a combination of nanometer film and undoped semiconductor

The metal oxide nanometer film semiconductor field-effect transistor (MONSFET) is reported. In this device, a combination of undoped semiconductor and nanometer film serves as the active layer. When a negative gate-source voltage is applied, electrons from the nanometer film enter into the semiconductor layer to form the conducting channel, and the drain current increases without saturation. This structure makes more materials available for the active layer, and thus suggests a new route to enrich the applications as well as to enhance the performances.