• Title of article

    Negative differential resistance of TEMPO molecules on Si(1 1 1)

  • Author/Authors

    Ann-Sofie Hallba¨ck، نويسنده , , Bene Poelsema، نويسنده , , Harold J.W. Zandvliet، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    6
  • From page
    4066
  • To page
    4071
  • Abstract
    Negative differential resistance (NDR) has been observed for individual 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) molecules on Si(1 1 1) in ultra high vacuum (UHV) scanning tunneling microscopy (STM) and spectroscopy (STS) measurements at room temperature. NDR effects were observed exclusively at negative bias voltage using an n-type Si(1 1 1) sample. At 77 K no NDR effects were observed, but the I(V) curves were similar in shape to those recorded on bare Si(1 1 1) sites. TEMPO was observed to adsorb preferentially at corner adatom sites of the Si(1 1 1)- 7 7 structure. Although the Si(1 1 1)-7 7 reconstruction was conserved, local defects were frequently observed in the vicinity of the TEMPO adsorbates.
  • Keywords
    adsorption , Semiconductors , charge transport , STM , Molecular electronics
  • Journal title
    Applied Surface Science
  • Serial Year
    2007
  • Journal title
    Applied Surface Science
  • Record number

    1003450