Title of article
Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes
Author/Authors
H. Dog?an، نويسنده , , H. Korkut، نويسنده , , Zeynep N. Yildirim، نويسنده , , Abdülmecit Türüt، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
7467
To page
7470
Abstract
We have identically prepared Ni/n-GaAs/In Schottky barrier diodes (SBDs) with doping density of 7.3 1015 cm 3. The barrier height for the
Ni/n-GaAs/In SBDs from the current–voltage characteristics have varied from 0.835 to 0.856 eV, and ideality factor n from 1.02 to 1.08.We have
determined a lateral homogeneous barrier height value of 0.862 eV for the Ni/n-GaAs/In SBD from the experimental linear relationship between
barrier heights and ideality factors.
Keywords
Barrier inhomogeneities , GaAs , Schottky barrier diodes , Metal-semiconductor contacts
Journal title
Applied Surface Science
Serial Year
2007
Journal title
Applied Surface Science
Record number
1004008
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