Pulsed laser deposition of aluminum nitride thin films for FBAR applications

Aluminum nitride thin films have been deposited by pulsed laser deposition on fused silica, Si (1 0 0) and Mo(1 1 0)-coated Si substrates. FTIR measurements show that only pure AlN phase is present in films, confirmed by UV-V spectroscopy where a strong absorption peak occurs at 206 nm, characteristic of AlN. C-axis oriented films have been obtained at a temperature of 800 8C on Si (1 0 0) substrate, and at a temperature of 200 8C on Mo(1 1 0)-coated Si substrates. AFM experiments show that AlN film surface is very smooth (3.0 nm rms) without any particulate and droplet.