• Title of article

    Field emission investigations of RuO2-doped SnO2 wires

  • Author/Authors

    Ashok B. Bhise، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    9159
  • To page
    9163
  • Abstract
    Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 104 A/cm2 is drawn from the single wire emitter at an applied field of 8.46 104 V/mm. Nonlinearity in the Fowler–Nordheim (F–N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 mA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications.
  • Keywords
    Field enhancement factor , doped semiconductor , Field emission , RuO2 , SnO2
  • Journal title
    Applied Surface Science
  • Serial Year
    2007
  • Journal title
    Applied Surface Science
  • Record number

    1004315