Title of article
Interfacial layer formation at ZnO/CdS interface
Author/Authors
Yasuhiro Abe a، نويسنده , , Arata Komatsu، نويسنده , , Hiroshi Nohira، نويسنده , , Koji Nakanishi، نويسنده , , Takashi Minemoto، نويسنده , , Toshiaki Ohta، نويسنده , , Hideyuki Takakura، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
8090
To page
8093
Abstract
We investigated the chemical bonding states at the ZnO/CdS interface by X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure (XAFS) measurements. We found that the octahedral ZnO6 species formed in the initial stage of the ZnO deposition from the Zn L3-edge X-ray absorption near-edge structure spectra. On the other hand, it is difficult to discuss the change of the chemical bonding states of the Zn atoms through the Zn 2p3/2 and the S 2p photoelectron spectra. In addition, we suggested that CdSO4 formed at the ZnO/CdS interface from the analysis of the O 1s photoelectron spectra. We enabled the significant investigation of the chemical bonding states at the ZnO/CdS interface by using a combination of XPS and XAFS measurements.
Keywords
XAFS , Interface , XPS , CdS , Thin film solar cell , Ga)Se2 , Cu (In , Local structure , XANES , ZnO
Journal title
Applied Surface Science
Serial Year
2012
Journal title
Applied Surface Science
Record number
1005359
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