The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition

Amorphous silicon carbide (a-SiC) is an excellent alternative passivation layer material for silicon solar cells especially working in hard and space environment. Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) layers were deposited on P-type Si(1 0 0) substrates at various deposition conditions by means of plasma enhanced chemical vapor deposition (PECVD) technology using silane (SiH4) methane (CH4) and ammonium (NH3) gas as precursors. The concentration of elements in layers was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical method simultaneously. Chemical compositions were analyzed by Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy. Irradiation of samples by fast neutrons with fluence 1.4 × 1014 cm−2 was used. No significance effect on the IR spectra band features after neutron irradiation was observed. Intensity of Raman spectra band features was decreased after neutron irradiation. The measured currents after irradiation are greater (up to 100 times) than the current before irradiation for all samples.