Photoluminescence and I–V characteristics of the carbonized silicon nanoporous pillar array

A layer of nanocrystalline 3C–SiC film was synthesized on silicon nanoporous pillar array (Si-NPA) by thermally carbonizing the surface of Si-NPA in a graphite crucible and a 3C–SiC/Si nanoheterojunction (named SiC/Si-NPA) was fabricated. Room-temperature photoluminescence of SiC/Si-NPA was studied and strong light emissions peaked at 383, 402 and 420 nm were observed from SiC/Si-NPA when it was excited by 300 nm fluorescent light. The I–V characteristics of SiC/Si-NPA were measured. Obvious rectification behavior and low leakage current were found in the prepared SiC/Si-NPA diodes. Based on the I–V measurements the conduction mechanism in SiC/Si-NPA under positive applied voltage was explained. Our results indicate that SiC/Si-NPA might be a valuable heterostructure nanosystem to be further probed for achieving enhanced optical and electrical properties.