Large phase coherence effects in GaMnAs-based nanostructures: Towards a quantum spintronics

Quantum coherent transport of spin-polarized carriers is observed on a very unusual large scale within epitaxial nanowires of GaMnAs, a diluted ferromagnetic semiconductor. From the analysis of the amplitude of strong universal conductance fluctuations, an effective phase coherence length of about 100 nm is inferred at image mK, which is one order of magnitude larger than in a granular 3d-metal ferromagnets. Together with the temperature and bias dependence of these reproducible fluctuations, their wire-length dependence is studied in single-domain sub-micron long nanowires with a perprendicular anisotropy. In particular, variations for two equivalent probe configurations are shown when the length becomes comparable to the actual phase coherence length. This result forecasts the possible observation of non-local voltage drops in GaMnAs nanostructures smaller than about 200 nm. Generally speaking, this research contributes to pave the way towards the realization of quantum spintronics devices.