Optical measurements of silicon wafer temperature

An optical technique for precise, non-contact, and real time measurement of silicon wafer temperature that uses the polarized reflectivity ratio image is described. The proposed method is based on temperature dependence of the optical functions of silicon. Expected strong temperature sensitivity is obtained near band gap. Simultaneous monitoring of temperature and oxide layer thickness is discussed using measurements at four wavelength 365 nm, 405 nm, 546 nm, and 820 nm.