Title of article
Relationship between structure and deposition conditions for CuInO2 thin films
Author/Authors
C. Yaicle، نويسنده , , A. Blacklocks، نويسنده , , A.V. Chadwick، نويسنده , , J. Perrière، نويسنده , , A. Rougier، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
1343
To page
1346
Abstract
CuInO2 thin films were deposited using the Pulsed Laser Deposition technique. The influence of various deposition parameters and mainly the oxygen pressure on the texture, composition and structure of the films is discussed. Films deposited with an oxygen pressure in the 0.2–1 Pa range exhibit the delafossite structure. Higher pressure introduces an increase in the oxygen content leading to a CuInO2.10 composition for the film deposited at 5 Pa and a progressive loss of the delafossite structure. As confirmed by an EXAFS study, the oxygen stoichiometry controls the Cu+/Cu2+ ratio.
Keywords
Pulsed laser deposition , Thin films , Copper indium oxide , Delafossite , EXAFS , Stoichiometry , Oxygen pressure
Journal title
Applied Surface Science
Serial Year
2007
Journal title
Applied Surface Science
Record number
1008702
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