Spectroscopic ellipsometric characterization of TiAlN/TiAlON/Si3N4 tandem absorber for solar selective applications

Sputter deposited TiAlN/TiAlON/Si3N4 tandem absorber has been characterized by spectroscopic ellipsometry in the wavelength range of 450–1200 nm. Each layer of the tandem absorber viz., TiAlN, TiAlON and Si3N4 has been deposited separately on copper substrate (Cu) and ellipsometric measurements have been carried out on each of these layers. The measured ellipsometric spectra were fitted with theoretically simulated spectra and the sample structure and wavelength dispersion of optical constants of each layers have been determined. The ellipsometric measurements have also been carried out on the three-layer tandem absorber deposited on Cu substrate. By analyzing the ellipsometric data, depth profiling of the tandem absorber has been carried out using the derived optical constants of the individual layers.