Investigation of sol–gel derived HfO2 on 4H-SiC

Deposition of HfO2 films on n-type 4H-SiC substrates by sol–gel spin-on coating technique has been performed and the physical and electrical characteristics of this film as a function of annealing temperature (550, 750, and 850 °C for 30 min) have been reported. The physical properties of the film have been characterized using a Filmetrics and X-ray diffractometer, while conduction atomic force microscope and semiconductor parameter analyzer were used for electrical characterization. Phase transformation has been revealed in the oxide as the annealing temperature changed. Refractive index, relative density, dielectric constant of the film, and oxide–semiconductor interface trap density have been extracted and related to the leakage current through the oxide. It has been recorded that, oxide annealed at 700 °C has demonstrated the lowest leakage current and the best oxide reliability. The reasons of these observations have been explained.