Title of article
Au doped Sb3Te phase-change material for C-RAM device
Author/Authors
Feng Wang، نويسنده , , Ting Zhang، نويسنده , , Chun-liang Liu، نويسنده , , Zhitang Song)، نويسنده , , Liangcai Wu، نويسنده , , Bo Liu، نويسنده , , Songlin Feng، نويسنده , , Bomy Chen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
2281
To page
2284
Abstract
Au doped Sb3Te phase-change films have been investigated by means of in situ temperature-dependent resistance measurement. Crystallization temperature of 2 at.% Au doped Sb3Te has been enhanced to 161 °C, which leads to a better data retention. The physical stability of the film has been improved evidently after adding Au as well. Resistance contrast has been improved to 1.1 × 104, one order of magnitude higher than that of pure Sb3Te. X-ray diffraction patterns indicate the polycrystalline Au–SbTe series have hexagonal structure, similar with pure Sb3Te alloy, when Au doping dose is less than 9 at.%.
Keywords
Crystallization temperature , Data retention , Au doped Sb3Te , Phase-change
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1008852
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