Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors

Ba0.6Sr0.4TiO3 thin films were deposited on Pt/SiO2/Si substrate by radio frequency magnetron sputtering. High-resolution transmission electron microscopy (HRTEM) observation shows that there is a transition layer at BST/Pt interface, and the layer is about 7–8 nm thickness. It is found that the transition layer was diminished to about 2–3 nm thickness by reducing the initial RF sputtering power. X-ray photoelectron spectroscopy (XPS) depth profiles show that high Ti atomic concentration results in a thick interfacial transition layer. Moreover, the symmetry ν of ɛr–V curve of BST thin film is enhanced from 52.37 to 95.98%. Meanwhile, the tunability, difference of negative and positive remanent polarization (Pr), and that of coercive field (EC) are remarkably improved.