Title of article
Phosphorous doped Ru film for advanced Cu diffusion barriers
Author/Authors
Dung-Ching Perng، نويسنده , , Jia-Bin Yeh، نويسنده , , Kuo-Chung Hsu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
6059
To page
6062
Abstract
Copper diffusion barrier properties of phosphorous doped Ru film are studied. Phosphorous out-diffusion to Ru from underneath phosphosilicate glass (PSG) layer results in P doped Ru film. The doped Ru film improves copper barrier properties and has excellent thermal stability. XRD graph indicates that there is no copper silicide and ruthenium silicide formations after annealing at 550 °C for 30 min in vacuum. This result is consistant with AES depth profiles which show no Cu, Ru, O and Si inter-diffusion. The phosphorous doped Ru barrier also blocks oxygenʹs diffusion to copper from the PSG layer. The phosphorous doped Ru film could be an alternative Cu diffusion barrier for advanced Cu interconnects.
Keywords
Diffusion barrier , Doped ruthenium , Ruthenium , Copper metallization , Copper interconnect
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009453
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