Title of article
Catalyst formation at various temperatures by hydrogen radical treatment and synthesis of silicon nanowires
Author/Authors
Minsung Jeon، نويسنده , , Koichi Kamisako، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
7703
To page
7707
Abstract
Metal nanocrystals as catalyst from a metal oxide film were fabricated at various temperatures after hydrogen radical treatment and great quantities of silicon nanowires (SiNWs) were successfully synthesized using the hydrogen microwave afterglow deposition method. Indium (In) metal nanocrystals with size of about 12 nm were obtained from indium oxide film after hydrogen radical pre-treatment for 5 min at 400 °C and their quantity reached approximately 3 × 1010 cm−2. Subsequently, a numerous SiNWs were grown with the crystal diffraction of (1 1 1), (2 2 0) and (3 1 1). The diameters of the SiNWs mainly ranged from 5 to 120 nm and their lengths extended to about 8.5 μm.
Keywords
Indium catalyst , Nanocrystals , Metal oxide film , Silicon nanowires , Hydrogen radicals , FE-SEM , TEM
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009781
Link To Document