Temperature dependence characterization of metal–insulator–nonuniformly-doped semiconductor solar cell

Four layered metal–insulator–pp+ semiconductor MIS solar cell device was simulated using a comprehensive numerical model. The semiconductor layer was assumed to be nonuniformly-doped in which additional drift electric field inside the semiconductor could be generated. The effects of the electrostatic and kinetic properties of the electronic states at the insulator-semiconductor interface were taken into account. The influences of the operating temperature on the device performance were studied in detail.