Influence of primary ion beam irradiation conditions on the depth profile of hydrogen in tantalum film

In order to confirm the possibility that hydrogen in Ta film migrates during SIMS measurement, the influence of primary ion beam irradiation conditions on the depth profile of hydrogen in a Ta film was investigated. Deuterium implanted in a Ta2O5/Ta/Ta2O5 structure was analyzed using Cs+ irradiation interruption. The result shows that hydrogen was discharged from the Ta film to the vacuum of the sample chamber during SIMS measurements with a Cs+ ion beam. The deuterium profile of the Ta film analyzed with an O2+ primary ion beam differed from those with Cs+ or Ar+ irradiations, and it depended on the incidence angle of the O2+ beam. According to these results, we propose a model where the hydrogen is discharged from Ta films to the vacuum of the sample chamber when Ta2O5 film is removed with Cs+ or Ar+ beam irradiation, but the hydrogen is not discharged when Ta2O5 film is formed on the Ta surface using O2+ primary beam irradiation.