Title of article
Metal organic chemical vapor deposition growth of Cd1−xFexSe thin films
Author/Authors
Z.G. Ju، نويسنده , , Y.M. Lu، نويسنده , , J.Y. Zhang، نويسنده , , C.X. Shan، نويسنده , , D.X. Zhao، نويسنده , , Z.Z. Zhang، نويسنده , , B.H. Li، نويسنده , , B. Yao، نويسنده , , D.Z. Shen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
3332
To page
3335
Abstract
High quality Cd1−xFexSe thin films with different Fe content were grown on sapphire substrates by using low-pressure metal organic chemical vapor deposition (LP-MOCVD). The structural properties of these films were examined by X-ray diffraction (XRD). Temperature dependent spectra were also used to study the origin of the emission peak. Strong near band emission (NBE) without other defect related emission at room temperature demonstrates that the thin films have high optical quality. Absorption spectra were used to estimate the band gap of the Cd1−xFexSe films.
Keywords
Cd1?xFexSe , Thin film , PL , MOCVD
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1010917
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