Micro-Raman investigation of stress distribution in laser drilled via structures

Through-wafer vertical electrical interconnects (vias) with diameters varied from 15 to 80 μm were formed on Si substrates using a UV diode-pumped solid state laser (355 nm). Micro-Raman spectroscopy was employed for the investigation of stress and structural changes induced in silicon within the heat-affected zone due to laser machining. A maximum stress of ∼300 MPa, as a result of laser drilling, was observed close to the via edge. It was found that the stress decays within a distance of 1–3 μm from the via’s side-wall and that the laser machining did not lead to the formation of amorphous silicon around the via structures.