Effect of different Ge predeposition amounts on SiC grown on Si (1 1 1)

The SiC films were grown by solid source molecular beam epitaxy (SSMBE) on Si (1 1 1) with different amounts of Ge predeposited on Si prior to the epitaxial growth of SiC. The samples were investigated with reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). The results indicate that there is an optimized Ge predeposition amount of 0.2 nm. The optimized Ge predeposition suppress the Si outdiffusion and reduce the formation of voids. For the sample without Ge predeposition, the Si outdiffusion can be observed in RHEED and the results of XRD show the worse quality of SiC film. For the sample with excess amount of Ge predeposition, the excess Ge can increase the roughness of the surface which induces the poor quality of the SiC film.