Title of article
An ion momentum as a novel parameter for the preparation of the magnetostrictive thin film
Author/Authors
Koji Makita، نويسنده , , Mitsuaki Takeuchi، نويسنده , , Masashi Sato، نويسنده , , Hirohisa Uchida، نويسنده , , Yoshihito Matsumura، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
3
From page
1265
To page
1267
Abstract
The Sm–Fe system known as Giant magnetostrictive (GM) thin films was prepared by d.c. magnetron sputtering process. The present study has shown the importance of the energetic incidence ions onto the depositing film surface for the magnetostrictive properties. The effect of ion bombardment on the magnetostrictive characteristics of GM films was quantitatively discussed. The new parameter, ion momentum, was proposed for the design of GM films.
Keywords
Giant magnetostriction , Thin film , Ion bombardment , Internal stress , Ion momentum , Magnetostrictive susceptibility , Sputtering process
Journal title
Applied Surface Science
Serial Year
2009
Journal title
Applied Surface Science
Record number
1011617
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