Title of article
Emission properties of Ti-DLC films prepared by unbalanced magnetron sputtering
Author/Authors
X.M. Gu and H.F. Liang، نويسنده , , Z.H. Liang، نويسنده , , C.L. Liu، نويسنده , , L.G. Meng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
1951
To page
1954
Abstract
The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm2 could be obtained at an applied field of 33 V/μm and the threshold field was 24 V/μm for the coplanar emission structure. The silicon substrate was found to limit the emission current in the diode structure because of its high resistivity.
Keywords
Field emission , Ti-DLC films , Device structures
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1011738
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